A Systematic literature review on dislocations in ZnO films Characterized by HR-XRD and TEM methods Agus Setiawan, Mumu Komaro, Aina Fairuz
Department of Mechanical Engineering Education, Faculty of Technology and Vocational Education, Universitas Pendidikan Indonesia
Abstract
Semiconductor technology plays an important role in producing electronic devices. Semiconductor thin films are generally grown on a substrate that has a lattice mismatch resulting in crystal defects (dislocations) which will reduce device performance. This article presents the results of a systematic literature review (SLR) on the characterization of dislocations in ZnO using HR-XRD and TEM techniques in the Scopus and the Web of Science (WoS) database. The results of this study will be used as the basis for further research in the development of dislocation characterization techniques for semiconductor thin films. By using the keyword dislocations in ZnO films, we found 316 documents in Scopus database for 1982 to 2021 and 348 documents in WoS database for 1993 to 2021. Among the documents of ZnO dislocations, we found 31 documents in Scopus and 40 documents in WoS for HRXRD characterization and 86 documents in Scopus and 136 in WoS for TEM characterization. Majority publications were found in WoS compared in Scopus. Furthermore, characterization of ZnO dislocations is mostly carried out using TEM compared to HRXRD, although TEM technique is relatively more difficult, time-consuming and expensive. For this reason, it is necessary to develop alternative dislocation characterization by HRXRD with more accurate results.
Keywords: dislocations, ZnO films, HR-XRD, TEM, SLR.
Keywords: Dislocations, ZnO films, HR-XRD, TEM, SLR.
