RBS Analysis for Determination of Structures and Damage Profiles Effected by Axial-Implantation on Zinc Blende GaAs Imam Rofii 1,a)
Author Affiliation
1 Department of Physics, Faculty of Mathematics and Natural Sciences (FMIPA), University of Jember
Jl. Kalimantan, 37, Kampus Tegalboto, Jember
Jawa Timur - Indonesia, 68121
Author Emails
a) Corresponding author: imr.rofii.fmipa[at]unej.ac.id or imr.rofii[at]gmail.com
Abstract
Implantation of germanium ions was used for modification of crystalline structure of zinc blende semi insulating GaAs samples. During these implantation processes, energetic germanium ion beam was directed on the surface of the GaAs samples. Then, the germanium ion beam entered GaAs crystal structures, underwent multiple scattering with the atomic hosts (Ga and As ions) and creating demage before stopping. In this research, germanium ion beams with various ion beam doses were used as germanium ion sources. Samples used in this work were semi-insulating GaAs zinc blende crystals grown by liquid encapsulated Czochralski method and cut as GaAs wafers. Germanium ion beam doses were varied to observe the effect of germanium ion beam on the structural profiles on the GaAs samples. Structures of GaAs crystalline samples after these ion implantation processes were then analyzed by means of Rutherford Backscattering Spectrometry (RBS) Channeling. In these structural analysis processes, energetic helium ion plasma was bombarded onto the surface creating backscattered beam. Then the backscattered beam was detected using the RBS ion detector. The RBS spectra would represent the count number of backscattered helium ion as a function of depth in the GaAs samples. The RBS Channeling results were also compared with with TRIM code calculation. These RBS results indicated that RBS spectra were directly proportional to the germanium ion beam doses of implantation in the GaAs samples.
